activity
20062022
most citedCurrent-Induced Polarization and the Spin Hall Effect at Room Temperature

236 citations · 714 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2022★ 59 cited

Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet FeGaTe with highly spin-polarized Fermi surfaces

Xinlu Li, Meng Zhu, Yaoyuan Wang +5

Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW mate…

cond-mat.mtrl-sci2021★ 121 cited

Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions

Jianting Dong, Xinlu Li, Gautam Gurung +5

Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magneti…

cond-mat.mtrl-sci2021★ 24 cited

Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures

Xinlu Li, Yurong Su, Meng Zhu +4

Spin-dependent transport in a full van der Waals (vdW) giant magnetoresistance (GMR) junctions with the structure of Fe3GeTe2/XTe2/Fe3GeTe2 (X = Pt, Pd) has been investigated by us…

cond-mat.mtrl-sci2021★ 4 cited

Ferroelectric control of Néel vector in L10 type of antiferromagnetic films

Fanxing Zheng, Meng Zhu, Xinlu Li +4

How to efficiently manipulate the Néel vector of antiferromagnets (AFM) by electric methods is one of the major focuses in current antiferromagnetic spintronics. In this work, we i…

cond-mat.mes-hall2020★ 136 cited

Van der Waals Multiferroic Tunnel Junctions

Yurong Su, Xinlu Li, Meng Zhu +3

Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for non-volatile memory devices. So far, however, all the existing…

cond-mat.mtrl-sci2019★ 88 cited

Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2

Yurong You, Yuanyuan Gong, Hang Li +8

In this work, we reported the observation of a novel planar topological Hall effect (PTHE) in single crystal of Fe3GeTe2, a paradigmatic two-dimensional ferromagnet with strong uni…

cond-mat.mtrl-sci2009★ 20 cited

Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

M. J. Wilson, M. Zhu, R. C. Myers +3

We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bila…

cond-mat.mtrl-sci2007★ 26 cited

Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers

M. Zhu, M. J. Wilson, B. L. Sheu +3

We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show t…

cond-mat.mes-hall2006★ 236 cited

Current-Induced Polarization and the Spin Hall Effect at Room Temperature

N. P. Stern, S. Ghosh, G. Xiang +3

Electrically-induced electron spin polarization is imaged in n-type ZnSe epilayers using Kerr rotation spectroscopy. Despite no evidence for an electrically-induced internal magnet…