Current-Induced Polarization and the Spin Hall Effect at Room Temperature

Abstract

Electrically-induced electron spin polarization is imaged in n-type ZnSe epilayers using Kerr rotation spectroscopy. Despite no evidence for an electrically-induced internal magnetic field, current-induced in-plane spin polarization is observed with characteristic spin lifetimes that decrease with doping density. The spin Hall effect is also observed, indicated by an electrically-induced out-of-plane spin polarization with opposite sign for spins accumulating on opposite edges of the sample. The spin Hall conductivity is estimated as 3 +/- 1.5 Ohms**-1 m**-1/|e| at 20 K, which is consistent with the extrinsic mechanism. Both the current-induced spin polarization and the spin Hall effect are observed at temperatures from 10 K to 295 K.

5 pages, 4 figures

References in corpus (8)

• Dissipationless Quantum Spin Current at Room Temperature
• Direct electronic measurement of the spin Hall effect
• Current induced electron spin polarization in strained semiconductors
• On A Proper Definition of Spin Current
• Theory of Spin Hall conductivity in n-doped GaAs
• Suppression of Spin Relaxation in Submicron InGaAs Wires
• Generating Spin Currents in Semiconductors with the Spin Hall Effect
• Mechanical control of spin-orbit splitting in GaAs and InGaAs epilayers

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