Spin Accumulation in the Extrinsic Spin Hall Effect
arXiv:cond-mat/0508076 · doi:10.1103/PhysRevB.72.241303
Abstract
The drift-diffusion formalism for spin-polarized carrier transport in semiconductors is generalized to include spin-orbit coupling. The theory is applied to treat the extrinsic spin Hall effect using realistic boundary conditions. It is shown that carrier and spin diffusion lengths are modified by the presence of spin-orbit coupling and that spin accumulation due to the extrinsic spin Hall effect is strongly and qualitatively influenced by boundary conditions. Analytical formulas for the spin-dependent carrier recombination rates and inhomogeneous spin densities and currents are presented.
arXiv comment5 pages, 3 figures
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