Frequency doubling and memory effects in the Spin Hall Effect

Abstract

We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed.

References in corpus (7)

• Direct electronic measurement of the spin Hall effect
• Room Temperature Reversible Spin Hall Effect
• Theory of Spin Hall conductivity in n-doped GaAs
• Spin memristive systems
• Out-of-plane spin polarization from in-plane electric and magnetic fields
• Spin blockade at semiconductor/ferromagnet junctions
• Hall Voltage with the Spin Hall Effect

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• Solving mazes with memristors: a massively-parallel approach
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• Second and higher harmonics generation with memristive systems
• Spin-Hall Conductivity and Electric Polarization in Metallic Thin Films
• Spin polarization control by electric stirring: proposal for a spintronic device
• Hybrid Spin Noise Spectroscopy and the Spin Hall Effect
• Nonlinear spin Hall effect in GaAs (110) quantum wells