Spin memristive systems

Abstract

Recently, in addition to the well-known resistor, capacitor and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale system with coupled ionic and electronic transport. Here, we discuss a system whose memristive behaviour is based entirely on the electron spin degree of freedom which allows for a more convenient control than the ionic transport in nanostructures. An analysis of time-dependent spin transport at a semiconductor/ferromagnet junction provides a direct evidence of memristive behaviour. Our scheme is fundamentally different from previously discussed schemes of memristive devices and broadens the possible range of applications of semiconductor spintronics.

References in corpus (4)

• Spin extraction theory and its relevance to spintronics
• Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin blockade regime
• Schottky-barrier induced spin dephasing in spin injection
• Spin blockade at semiconductor/ferromagnet junctions

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