Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions

Abstract

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic effect, spin valve effect, and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.

Minor Revisions. To appear in Phys. Rev. Lett

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• Spin Electronics and Spin Computation
• Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells
• A proposal for a spin-polarized solar battery

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