Spin Polarization Dependence of Carrier Effective Mass in Semiconductor Structures: Spintronic Effective Mass

Abstract

We introduce the concept of a spintronic effective mass for spin-polarized carriers in semiconductor structures, which arises from the strong spin-polarization dependence of the renormalized effective mass in an interacting spin-polarized electron system. The majority-spin many-body effective mass renormalization differs by more than a factor of 2 at rs=5 between the unpolarized and the fully polarized two-dimensional system, whereas the polarization dependence (~15%) is more modest in three dimensions around metallic densities (rs~5). The spin-polarization dependence of the carrier effective mass is of significance in various spintronic applications.

Final version

References in corpus (4)

• Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures
• Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system
• Quasiparticle effective mass divergence in two dimensional electron systems
• Temperature dependent effective mass renormalization in a Coulomb Fermi liquid

Cited by in corpus (5)

• Effective mass suppression in dilute, spin-polarized two-dimensional electron systems
• Spin polarized two-dimensional electron gas embedded in semimagnetic quantum well : ground state, spin responses, spin excitations, Raman spectrum
• Dependence of Effective Mass on Spin and Valley Degrees of Freedom
• Comment on "Effects of Thickness on the Spin Susceptibility of the Two Dimensional Electron Gas"
• Quasi-equilibrium optical nonlinearities in spin-polarized GaAs