Nonlinear 2D Spin Susceptibility in a Finite Magnetic Field: Spin-Polarization Dependence

Abstract

By theoretically calculating the interacting spin susceptibility of a two-dimensional electron system in the presence of finite spin polarization, we show that the extensively employed technique of measuring the 2D spin susceptibility by linear extrapolation to a zero field from the finite-field experimental data is theoretically unjustified due to the strong nonlinear magnetic field dependence of the interacting susceptibility. Our work compellingly establishes that much of the prevailing interpretation of the 2D susceptibility measurements is incorrect, and, in general, the 2D interacting susceptibility cannot be extracted from the critical magnetic field for full spin polarization, as is routinely done experimentally.

arXiv commentFinal version

References in corpus (12)

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Cited by in corpus (12)

• Valley polarization assisted spin polarization in two dimensions
• Polarization dependent Landau level crossing in a two-dimensional electron system in MgZnO/ZnO-heterostructure
• Aharonov-Bohm oscillations and electron gas transitions in hexagonal core-shell nanowires with an axial magnetic field
• Nonlinear magnetic field dependence of spin polarization in high density two-dimensional electron systems
• Measuring the spin polarization and Zeeman energy of a spin-polarized electron gas: Comparison between Raman scattering and photoluminescence
• Probing spin susceptibility of a correlated two-dimensional electron system by transport and magnetization measurements
• Interplay among spin, orbital effects and localization in a GaAs two-dimensional electron gas in a strong in-plane magnetic field
• Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system
• Additional information for the paper `Attempt to distinguish long range temporal correlations from the statistics of the increments by natural time analysis' after its initial submission on February 25, 2006. Part II, Updated
• Magnetic-field-driven redistribution between extended and localized electronic states in high-mobility Si MOSFETs at low temperatures
• Comment on "Effects of Thickness on the Spin Susceptibility of the Two Dimensional Electron Gas"
• Stoner-type theory of Magnetism in Silicon MOSFETs