Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system
arXiv:2304.04272 · doi:10.1038/s41598-023-44580-y
Abstract
The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effective mass is found to be strongly enhanced and independent of the degree of spin polarization, which indicates that the mass enhancement is not related to the electrons' spins. The observed effect turns out to be universal for silicon-based 2D electron systems, regardless of random potential, and cannot be explained by existing theories.
References in corpus (12)
- Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures
- Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system
- Coulomb Correlations and the Wigner-Mott Transition
- Competing correlated states around the zero field Wigner crystallization transition of electrons in two-dimensions
- Effective mass suppression in dilute, spin-polarized two-dimensional electron systems
- Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well
- Magnetization of a strongly interacting two-dimensional electron system in perpendicular magnetic fields
- Contrast between spin and valley degrees of freedom
- Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
- Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells
- Dependence of Effective Mass on Spin and Valley Degrees of Freedom
- Magnetic-field-driven redistribution between extended and localized electronic states in high-mobility Si MOSFETs at low temperatures