Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
arXiv:cond-mat/0310107 · doi:10.1016/j.spmi.2004.02.003
Abstract
The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.
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Cited by in corpus (9)
- Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
- Metal-insulator transitions and the effects of electron-electron interactions in two-dimensional electron systems
- Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well
- Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well
- Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells
- Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime
- Metallic behavior in Si/SiGe 2D electron systems
- Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system
- Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K