23 citations · 35 across the 3 of their papers we have counts for
5 papers
Experimental investigation of the edge states structure at fractional filling factors
E. V. Deviatov, V. T. Dolgopolov, A. Lorke +2
We experimentally study electron transport between edge states in the fractional quantum Hall effect regime. We find an anomalous increase of the transport across the 2/3 incompres…
Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime
A. A. Shashkin, E. V. Deviatov, V. T. Dolgopolov +5
In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degre…
Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
V. T. Dolgopolov, E. V. Deviatov, A. A. Shashkin +4
The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the rem…
Response of the two-dimensional electron gas of AlGaAs/GaAs heterostructures to parallel magnetic field
V. S. Khrapai, E. V. Deviatov, A. A. Shashkin +1
We study the transport properties of the two-dimensional electron gas in AlGaAs/GaAs heterostructures in parallel to the interface magnetic fields at low temperatures. The magnetor…
Lateral tunneling through the controlled barrier between edge channels in a two-dimentional electron system
A. A. Shashkin, V. T. Dolgopolov, E. V. Deviatov +5
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine str…