Response to Parallel Magnetic Field of a Dilute 2D Electron System across the Metal-Insulator Transition

Abstract

The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon MOSFET's is dramatic and similar to that found on the conducting side of the metal-insulator transition: there is a large initial increase in resistivity with increasing field, followed by saturation to a value that is approximately constant above a characteristic magnetic field of about one Tesla. This is unexpected behavior in an insulator that exhibits Efros-Shklovskii variable-range hopping in zero field, and appears to be a general feature of very dilute electron systems.

References added and updated. To be published in Phys. Rev. B

References in corpus (2)

• Apparent Metallic Behavior at B = 0 of a two-dimensional electron system in AlAs
• A few electrons per ion scenario for the B=0 metal-insulator transition in two dimensions

Cited by in corpus (32)

• Metallic behavior and related phenomena in two dimensions
• Transport in strongly correlated two dimensional electron fluids
• Magnetoresistance of a two-dimensional electron gas in a parallel magnetic field
• Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs
• Parallel magnetic field induced giant magnetoresistance in low density {\it quasi}-two dimensional layers
• In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems
• Small Angle Shubnikov-de Haas Measurements in Silicon MOSFET's: the Effect of Strong In-Plane Magnetic Field
• Spin polarization and g-factor of a dilute GaAs two-dimensional electron system
• The so-called two dimensional metal-insulator transition
• Anisotropic magnetoresistance of GaAs two-dimensional holes
• The 2D metal-insulator transition as a strong localization induced crossover phenomenon
• The effect of a parallel magnetic field on the Boltzmann conductivity and the Hall coefficient of a disordered two dimensional Fermi liquid
• Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells
• Graphene magnetoresistance in a parallel magnetic field: Spin polarization effect
• Two-species percolation and Scaling theory of the metal-insulator transition in two dimensions
• The energy scale behind the metallic behaviors in low-density Si-MOSFETs
• Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
• Single and Paired Point Defects in a 2D Wigner Crystal
• Anomalous Parallel Field Negative Magnetoresistance in Ultrathin Films Near the Superconductor-Insulator Transition
• Spin polarization and exchange-correlation effects in transport properties of two-dimensional electron systems in silicon
• Spin-splitting in GaAs 2D holes
• Evidence for mixed phases and percolation at the metal-insulator transition in two dimensions
• Magnetic Field Induced Spin Polarization of AlAs Two-dimensional Electrons
• Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator
• Signature of Cooper Pairs in the Non-Superconducting Phases of Amorphous Superconducting Tantalum Films
• Resistivity of the insulating phase approaching the 2D metal-insulator transition: the effect of spin polarization
• Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors
• Does spin-orbit coupling play a role in metal-nonmetal transition in two-dimensional systems?
• Spectrum of an open disordered quasi-two-dimensional electron system: strong orbital effect of the weak in-plane magnetic field
• Large magnetoresistance by Pauli blockade in hydrogenated graphene
• Spin polarization and transition from metallic to insulating behavior in 2D systems
• Metal-insulator transition in a two-dimensional electron system: the orbital effect of in-plane magnetic field