The effect of a parallel magnetic field on the Boltzmann conductivity and the Hall coefficient of a disordered two dimensional Fermi liquid

Abstract

Screening of an external random potential by a two dimensional (2D) Fermi liquid may be strongly dependent on the degree of its polarization. This is considered as a possible mechanism for the observed strong magnetoresistance of the 2D electron liquid in the magnetic field parallel to the electron plane. A Hartree-Fock calculation for the weakly disordered Hubbard model which qualitatively describes the experiments on the diagonal and the Hall resisitivity in the finite-temperature metallic state in the high mobility Si inversion layers is presented.

RevTex, 4 pages, 3 ps figures included; references added and updated, added a fit to exp data of Okamoto et. al. (Fig. 2) and a discussion on differences and similarities with Dolgopolov and Gold theory; added a calculation of the Hall coefficient and the discussion of the Vitkalov et. al. experiment

References in corpus (7)

• Spin Degree of Freedom in a Two-Dimensional Electron Liquid
• Magnetoresistance of a two-dimensional electron gas in a parallel magnetic field
• Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs
• Parallel magnetic field induced giant magnetoresistance in low density {\it quasi}-two dimensional layers
• Small Angle Shubnikov-de Haas Measurements in Silicon MOSFET's: the Effect of Strong In-Plane Magnetic Field
• Metallic low-temperature resistivity in 2D over an extended temperature range
• Metal-insulator transition in 2D: Anderson localization by temperature-dependent disorder?

Cited by in corpus (38)

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• Inhomogeneous metallic phase upon disordering a two dimensional Mott insulator
• The so-called two dimensional metal-insulator transition
• Disorder Screening in Strongly Correlated Systems
• Interaction Corrections to Two-Dimensional Hole Transport in Large $r_s$ Limit
• Observation of Spontaneous Ferromagnetism in a Two-Dimensional Electron System
• The 2D metal-insulator transition as a strong localization induced crossover phenomenon
• Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well
• Graphene magnetoresistance in a parallel magnetic field: Spin polarization effect
• Electrically detected electron spin resonance in a high mobility silicon quantum well
• Interacting electrons in a two-dimensional disordered environment: Effect of a Zeeman magnetic field
• Ground-state properties of the disordered Hubbard model in two dimensions
• Effective mass suppression upon complete spin-polarization in an isotropic two-dimensional electron system
• Transition from insulating to metallic phase induced by in-plane magnetic field in HgTe quantum wells
• Self-consistent study of Anderson localization in the Anderson-Hubbard model in two and three dimensions
• Spin-dependent resistivity at transitions between integer quantum Hall states
• Similarities and Differences in 2D `metallicity' induced by temperature and parallel magnetic field: To screen or not to screen
• Temperature dependent transport of correlated disordered electrons: elastic vs. inelastic scattering
• Anderson localization and momentum-space entanglement
• Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field
• Magnetoresistance of double layer hybrid system in tilted magnetic field
• Static Screening and Delocalization Effects in the Hubbard-Anderson Model
• In-plane magnetodrag in dilute bilayer two-dimensional systems: a Fermi liquid theory
• Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells
• Valley-dependent 2D transport in Si-MOSFETs
• Hall Coefficient and electron-electron interaction of 2D electrons in Si-MOSFET's
• Metallic behavior in Si/SiGe 2D electron systems
• Non-monotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in GaAs/AlGaAs
• Large-N theory of strongly commensurate dirty-bosons: absence of transition in two dimensions
• Non-Gaussian Spatial Correlations Dramatically Weaken Localization
• Linear in-plane magnetoconductance and spin susceptibility of a 2D electron gas on a vicinal silicon surface
• Local Kondo temperatures in atomic chains
• Glass Transition in a Two-Dimensional Electron System in Silicon in a Parallel Magnetic Field
• Effect of Screening on Spin Polarization in a Two-Dimensional Electron Gas
• Pseudo-gap and spin polarization in a two-dimensional electron gas