Self-consistent study of Anderson localization in the Anderson-Hubbard model in two and three dimensions

Abstract

We consider the change in electron localization due to the presence of electron-electron repulsion in the \HA model. Taking into account local Mott-Hubbard physics and static screening of the disorder potential, the system is mapped onto an effective single-particle Anderson model, which is studied within the self-consistent theory of electron localization. We find rich nonmonotonic behavior of the localization length $\xi$ in two-dimensional systems, including an interaction-induced exponential enhancement of $\xi$ for small and intermediate disorders although $\xi$ remains finite. In three dimensions we identify for half filling a Mott-Hubbard-assisted Anderson localized phase existing between the metallic and the Mott-Hubbard-gapped phases. For small $U$ there is re-entrant behavior from the Anderson localized phase to the metallic phase.

7 pages, 4 figures, accepted for publication in Phys. Rev. B, journal version

References in corpus (6)

• Metal-insulator transition in two-dimensional electron systems
• Dynamical Mean Field Study of the Two-Dimensional Disordered Hubbard Model
• Density modulations in an elongated Bose-Einstein condensate released from a disordered potential
• Mott-Hubbard Transition and Anderson Localization: Generalized Dynamical Mean-Field Theory Approach
• Hole Localization in One-Dimensional Doped Anderson-Hubbard Model
• Disorder screening near the Mott-Anderson transition