Graphene magnetoresistance in a parallel magnetic field: Spin polarization effect
arXiv:0812.0403 · doi:10.1103/PhysRevB.80.075417
Abstract
We develop a theory for graphene magnetotransport in the presence of carrier spin polarization as induced, for example, by the application of an in-plane magnetic field () parallel to the 2D graphene layer. We predict a negative magnetoresistance for intrinsic graphene, but for extrinsic graphene we find a non-monotonic magnetoresistance which is positive at lower magnetic fields (below the full spin-polarization) and negative at very high fields (above the full spin-polarization). The conductivity of the minority spin band electrons does not vanish as the minority carrier density () goes to zero. The residual conductivity of electrons at is unique to graphene. We discuss experimental implications of our theory.
5 pages, 3 figures
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- Hysteresis loops of the magnetoconductance in graphene devices
- Magnetotransport in single layer graphene in a large parallel magnetic field
- Magnetoresistance of double layer hybrid system in tilted magnetic field
- Spin structure factors of doped monolayer Germanene in the presence of spin-orbit coupling
- Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads
- Inducing a metal-insulator transition in disordered interacting Dirac fermion systems via an external magnetic field
- Magnetic phase transition in disordered interacting Dirac fermion systems via the Zeeman field