Metallic behavior in Si/SiGe 2D electron systems

Abstract

We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by screened random charged Coulombic impurity centers. We obtain comprehensive agreement with existing experimental transport data, compellingly establishing that the observed 2D metallic behavior in low-density Si/SiGe systems arises from the peculiar nature of 2D screening of long-range impurity disorder. In particular, our theory correctly predicts the experimentally observed metallic temperature dependence of 2D resistivity in the fully spin-polarized system.

References in corpus (6)

• Metal-insulator transition in two-dimensional electron systems
• The so-called two dimensional metal-insulator transition
• Quasiparticle effective mass divergence in two dimensional electron systems
• Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
• Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field
• In-plane magnetodrag in dilute bilayer two-dimensional systems: a Fermi liquid theory

Cited by in corpus (4)

• Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures
• Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells
• Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime
• Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems