Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems

Abstract

Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where the spins of electrons are expected to be polarized completely. Correlation between the spin polarization and minima in the diagonal resistivity observed by rotating the samples for various total strength of the magnetic field is also investigated.

3 pages, RevTeX, 4 eps-figures, conference paper (EP2DS-13)

References in corpus (2)

• Spin Degree of Freedom in a Two-Dimensional Electron Liquid
• Apparent Metallic Behavior at B = 0 of a two-dimensional electron system in AlAs

Cited by in corpus (8)

• Spin polarization and metallic behavior of a silicon two-dimensional electron system
• Electrically detected electron spin resonance in a high mobility silicon quantum well
• Conductivity of a 2DEG in Si/SiGe heterostructure near metal- insulator transition: role of the short and long range scattering potential
• Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime
• Metallic behavior in Si/SiGe 2D electron systems
• Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems
• Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system
• In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system