Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime

Abstract

In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just before the onset of complete spin polarization but reappears again in the fully spin-polarized state, being, however, suppressed relative to the zero-field case. Analysis of the degree of the suppression allows one to distinguish between the screening and the interaction-based theories.

References in corpus (28)

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Cited by in corpus (5)

• Spin polarization induced tenfold magneto-resistivity of highly metallic 2D holes in a narrow GaAs quantum well
• Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field
• The effective electron mass in high-mobility SiGe/Si/SiGe quantum wells
• Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection
• Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field