The effective electron mass in high-mobility SiGe/Si/SiGe quantum wells

Abstract

The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, n_s, the effective mass has been found to grow with decreasing n_s, obeying the relation m*/m_b=n_s/(n_s-n_c), where m_b is the electron band mass and n_c~0.54*10^11 cm^-2. In samples with maximum mobilities ranging between 90 and 220 m^2/Vs, the dependence of the effective mass on the electron density has been found to be identical suggesting that the effective mass is disorder-independent, at least in the most perfect samples.

References in corpus (5)

• Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system
• Pauli spin susceptibility of a strongly correlated two-dimensional electron liquid
• Extended Hubbard model: Charge Ordering and Wigner-Mott transition
• Strongly enhanced effective mass in dilute two-dimensional electron systems: System-independent origin
• Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime

Cited by in corpus (5)

• Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well
• Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells
• Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system
• Composite Fermion Mass
• Band Flattening and Landau Level Merging in Strongly-Correlated Two-Dimensional Electron Systems