The effective electron mass in high-mobility SiGe/Si/SiGe quantum wells

Abstract

The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, n_s, the effective mass has been found to grow with decreasing n_s, obeying the relation m*/m_b=n_s/(n_s-n_c), where m_b is the electron band mass and n_c~0.54*10^11 cm^-2. In samples with maximum mobilities ranging between 90 and 220 m^2/Vs, the dependence of the effective mass on the electron density has been found to be identical suggesting that the effective mass is disorder-independent, at least in the most perfect samples.

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Cited by in corpus (8)

• Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well
• Indication of band flattening at the Fermi level in a strongly correlated electron system
• Recent developments in the field of the metal-insulator transition in two dimensions
• Metal-insulator transition and low-density phases in a strongly-interacting two-dimensional electron system
• Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells
• Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system
• Composite Fermion Mass
• Band Flattening and Landau Level Merging in Strongly-Correlated Two-Dimensional Electron Systems