43 citations · 130 across the 5 of their papers we have counts for
5 papers
High fidelity TiN processing modes for multi-gate Ge-based quantum devices
Sinan Bugu, Sheshank Biradar, Alan Blake +5
Charge or spin-qubits can be realized by using gate-defined quantum dots (QDs) in semiconductors in a similar fashion to the processes used in CMOS for conventional field-effect tr…
Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of GeSn alloys
H. -S. Lan, S. T. Chang, C. W. Liu
Electronic structures of GeSn alloys (0 1) are theoretically studied by nonlocal empirical pseudopotential method. For relaxed GeSn, a…
Indication of band flattening at the Fermi level in a strongly correlated electron system
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov +3
Using ultra-high quality SiGe/Si/SiGe quantum wells at millikelvin temperatures, we experimentally compare the energy-averaged effective mass, , with that at the Fermi level, $m…
Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov +3
We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in s…
The effective electron mass in high-mobility SiGe/Si/SiGe quantum wells
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov +3
The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Ha…