Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

Abstract

We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential.

as published. arXiv admin note: substantial text overlap with arXiv:1409.2712

References in corpus (4)

• The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si
• Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
• The effective electron mass in high-mobility SiGe/Si/SiGe quantum wells
• Comment on "Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures"

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• Band Flattening and Landau Level Merging in Strongly-Correlated Two-Dimensional Electron Systems
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