Stabilization of a two-dimensional quantum electron solid in perpendicular magnetic fields
arXiv:2409.06686 · doi:10.1103/PhysRevB.111.L041301
Abstract
We find that the double-threshold voltage-current characteristics in the insulating regime in the ultra-clean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an order of magnitude lower voltages and considerably higher electron densities compared to the zero-field case. This observation indicates the perpendicular-magnetic-field stabilization of the quantum electron solid.
As published
References in corpus (13)
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