activity
20172021
most citedEffective g factor of low-density two-dimensional holes in a Ge quantum well

20 citations · 50 across the 3 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2021

Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system

V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin +3

We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers , 2, 3, 4, and 6 in an ultraclean strongly i…

cond-mat.str-el2019

Metallic state in a strongly interacting spinless two-valley electron system in two dimensions

M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov +4

We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough…

cond-mat.str-el2018

Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields

V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin +3

We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between ele…

cond-mat.mes-hall201720 cited

Effective g factor of low-density two-dimensional holes in a Ge quantum well

T. M. Lu, C. T. Harris, S. -H. Huang +3

We report measurements of the effective factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations…

cond-mat.mes-hall201712 cited

Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system

T. M. Lu, L. A. Tracy, D. Laroche +5

Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices…

cond-mat.mes-hall201718 cited

Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells

M. Yu. Melnikov, V. T. Dolgopolov, A. A. Shashkin +3

We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplan…