Manifestation of strong correlations in transport in ultra-clean SiGe/Si/SiGe quantum wells

Abstract

We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities.

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Cited by in corpus (6)

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• How to recognize the universal aspects of Mott criticality?
• Metal-insulator transition in the disordered Hubbard model of the Lieb lattice
• Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures
• Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system
• Spin and valley effects on the quantum phase transition in two dimensions