113 citations · 254 across the 9 of their papers we have counts for
16 papers
Experimental investigation of the edge states structure at fractional filling factors
E. V. Deviatov, V. T. Dolgopolov, A. Lorke +2
We experimentally study electron transport between edge states in the fractional quantum Hall effect regime. We find an anomalous increase of the transport across the 2/3 incompres…
Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime
A. A. Shashkin, E. V. Deviatov, V. T. Dolgopolov +5
In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degre…
Shashkin et al. reply to cond-mat/0410409
A. A. Shashkin, S. Anissimova, M. R. Sakr +3
We show that the Comment by Reznikov and Sivan (cond-mat/0410409) is erroneous because the authors do not distinguish between Pauli and Curie spin susceptibility.
Pauli spin susceptibility of a strongly correlated two-dimensional electron liquid
A. A. Shashkin, S. Anissimova, M. R. Sakr +3
Thermodynamic measurements reveal that the Pauli spin susceptibility of strongly correlated two-dimensional electrons in silicon grows critically at low electron densities - behavi…
Comment on "Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures"
A. A. Shashkin, V. T. Dolgopolov, S. V. Kravchenko
We show that the comparison between theory and experiment, performed by Pudalov et al. in PRL 91, 126403 (2003), is not valid.
Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
V. T. Dolgopolov, E. V. Deviatov, A. A. Shashkin +4
The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the rem…