Direct measurements of the fractional quantum Hall effect gaps

Abstract

We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor nu=1/3 increases LINEARLY with magnetic field and is coincident with that for nu=2/3, reflecting the electron-hole symmetry in the spin-split Landau level. In low magnetic fields, at the ground-state spin transition for nu=2/3, a correlated behavior of the nu=1/3 and nu=2/3 gaps is observed.

References in corpus (4)

• Splitting of Long-Wavelength Modes of the Fractional Quantum Hall Liquid at $\nu =1/3$
• Spin gap in the 2D electron system of GaAs/AlGaAs single heterojunctions in weak magnetic fields
• Crossover and Coexistence of Quasiparticle Excitations in the Fractional Quantum Hall Regime at $\nu \le 1/3$
• Spin ordering: two different scenarios for the single and double layer structures in the fractional and integer quantum Hall effect regimes

Cited by in corpus (8)

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• Filling factor dependence of the fractional quantum Hall effect gap
• Determination of $g$-factor in InAs two-dimensional electron system by capacitance spectroscopy
• Spin transition in the fractional quantum Hall regime: Effect of extent of the wave function
• Magnetocapacitance oscillations and thermoelectric effect in two-dimensional electron gas irradiated by microwaves
• Fractional Quantum Hall Effect and vortex lattices