Spin transition in the fractional quantum Hall regime: Effect of extent of the wave function

Abstract

Using a magnetocapacitance technique, we determine the magnetic field of the spin transition, B*, at filling factor nu=2/3 in the 2D electron system in GaAs/AlGaAs heterojunctions. The field B* is found to decrease appreciably as the wave function extent controlled by back gate voltage is increased. Our calculations show that the contributions to the shift of B* from the change of the Coulomb energy and the g factor change due to nonparabolicity are approximately the same. The observed relative shift of B* is described with no fitting parameters.

arXiv commentas published

References in corpus (13)

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• Canted antiferromagnetic phase in a double quantum well in a tilted quantizing magnetic field
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Cited by in corpus (5)

• Spin-Polarization of Composite Fermions and Particle-Hole Symmetry Breaking
• Half-integer conductance plateau at the $\nu =2/3$ fractional quantum Hall state in a quantum point contact
• Determination of the Fermi Contour and Spin-polarization of $\nu =3/2$ Composite Fermions via Ballistic Commensurability Measurements
• Topological Protection in a Landau Flat Band at $\nu =7/11$, a Candidate Filling Factor for Unconventional Correlations
• Surface Acoustic Waves Probe of the Spin Phase Transition at $\nu$=2/3 in n-GaAs/AlGaAs structure