Filling factor dependence of the fractional quantum Hall effect gap

Abstract

We directly measure the chemical potential jump in the low-temperature limit when the filling factor traverses the nu = 1/3 and nu = 2/5 fractional gaps in two-dimensional (2D) electron system in GaAs/AlGaAs single heterojunctions. In high magnetic fields B, both gaps are linear functions of B with slopes proportional to the inverse fraction denominator, 1/q. The fractional gaps close partially when the Fermi level lies outside. An empirical analysis indicates that the chemical potential jump for an IDEAL 2D electron system, in the highest accessible magnetic fields, is proportional to q^{-1}B^{1/2}.

References in corpus (6)

• Splitting of Long-Wavelength Modes of the Fractional Quantum Hall Liquid at $\nu =1/3$
• Direct measurements of the fractional quantum Hall effect gaps
• Direct Measurement of the g-Factor of Composite Fermions
• Spin gap in the 2D electron system of GaAs/AlGaAs single heterojunctions in weak magnetic fields
• Signatures of spin in the n=1/3 Fractional Quantum Hall Effect
• Crossover and Coexistence of Quasiparticle Excitations in the Fractional Quantum Hall Regime at $\nu \le 1/3$

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