Extended Einstein diffusion-mobility equation for two-dimensional Schrödinger-type quantum materials
arXiv:1909.10029
Abstract
We present the exact analytical equation of diffusion-mobility for two-dimensional (2D) Schrödinger type transport systems, from molecules to materials. The density of electronic states in such Schrödinger systems pertains to the 2D non-relativistic carrier dynamics. We implement the Gaussian function into carrier density derivation; accordingly we develop the electronic compressibility and diffusion-mobility for both the generic and the degenerate Fermi systems. This model is originally developed from generalized Einstein relation, along with concern about the thermodynamic effects on many-body interactions. The effect of interactions is included through the imperfect Fermi-gas entropy function. Our extended model explains the cooperative behavior of thermal and electronic counterparts on diffusion-mobility in disordered systems at wide temperature range. Using earlier experimental and theoretical results, we have shown the validity of our extended Einstein model for different 2D degenerate systems. The results validate the original Einstein equation at certain sets of temperature and chemical potential values for different Gaussian variances. Beyond those combinations, the deviation is observed. At very low temperature, the diffusion-mobility depends only on chemical potential, which is the extended Einstein equation for ideal quantum materials.
arXiv commentTotal number pages - 35 (including Appendix), Total number of Figures - 20 (in main manuscript - 9, in appendix -11)
References in corpus (17)
- Observation of the Dirac fluid and the breakdown of the Wiedemann-Franz law in graphene
- Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
- Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
- Generalized Einstein relation for disordered semiconductors - implications for device performance
- Bad metallic transport in a cold atom Fermi-Hubbard system
- Ideal Graphene/Silicon Schottky Junction Diodes
- Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
- Chemical Potential and Quantum Hall Ferromagnetism in Bilayer Graphene
- Measurement of the electronic compressibility of bilayer graphene
- Electronic transport and quantum localization effects in organic semiconductors
- Modulation of mechanical resonance by chemical potential oscillation in graphene
- Gate Tunable Photovoltaic Effect in MoS2 vertical P-N Homostructures
- Filling factor dependence of the fractional quantum Hall effect gap
- Effective mass of quasiparticles from thermodynamics
- Chemical potential and compressibility of quantum Hall bilayer excitons
- Negative electronic compressibility enables electrically-induced charge density waves in a two-dimensional electron liquid
- Effect of Dynamic Disorder on Charge Transport in Organic Molecules