Spin gap in the 2D electron system of GaAs/AlGaAs single heterojunctions in weak magnetic fields

Abstract

We study the interaction-enhanced spin gaps in the two-dimensional electron gas confined in GaAs/AlGaAs single heterojunctions subjected to weak magnetic fields. The values are obtained from the chemical potential jumps measured by magnetocapacitance. The gap increase with parallel magnetic field indicates that the lowest-lying charged excitations are accompanied with a single spin flip at the odd-integer filling factor nu=1 and nu=3, in disagreement with the concept of skyrmions.

as published

References in corpus (2)

• Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures
• Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon

Cited by in corpus (4)

• Direct measurements of the fractional quantum Hall effect gaps
• Filling factor dependence of the fractional quantum Hall effect gap
• The spin-split incompressible edge states within empirical Hartree approximation at intermediately large Hall samples
• Energy spectrum reconstruction at the edge of a two-dimensional electron system with strong spin-orbit coupling