57 citations · 455 across the 26 of their papers we have counts for
26 papers
Manifestation of strong correlations in transport in ultra-clean SiGe/Si/SiGe quantum wells
A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov +6
We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator t…
Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov +4
The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is…
Classical effects in the weak-field magnetoresistance of InGaAs/InAlAs quantum wells
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov +3
We observe an unusual behavior of the low-temperature magnetoresistance of the high-mobility two-dimensional electron gas in InGaAs/InAlAs quantum wells in weak perpendicular magne…
Interaction-induced merging of Landau levels in an electron system of double quantum wells
A. A. Shashkin, V. T. Dolgopolov, J. W. Clark +3
We show that the disappearance of the chemical potential jumps over the range of perpendicular magnetic fields at fixed integer filling factor in a double quantum well with a tunne…
Merging of Landau levels in a strongly-interacting two-dimensional electron system in silicon
A. A. Shashkin, V. T. Dolgopolov, J. W. Clark +3
We show that the merging of the spin- and valley-split Landau levels at the chemical potential is an intrinsic property of a strongly-interacting two-dimensional electron system in…
Spin transition in the fractional quantum Hall regime: Effect of extent of the wave function
V. V. Vanovsky, V. S. Khrapai, A. A. Shashkin +3
Using a magnetocapacitance technique, we determine the magnetic field of the spin transition, B*, at filling factor nu=2/3 in the 2D electron system in GaAs/AlGaAs heterojunctions.…