Comment on "Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures"

Abstract

We show that the comparison between theory and experiment, performed by Pudalov et al. in PRL 91, 126403 (2003), is not valid.

comment on PRL 91, 126403 (2003) by Pudalov et al

References in corpus (7)

• Interaction corrections at intermediate temperatures: I. Longitudinal conductivity and kinetic equation
• Sharp increase of the effective mass near the critical density in a metallic 2D electron system
• Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system
• Metal-insulator transition in 2D: resistance in the critical region
• Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures
• Exclusion of quantum coherence as the origin of the 2D metallic state in high-mobility silicon inversion layers
• Sharply increasing effective mass: a precursor of the spontaneous spin polarization in a dilute two-dimensional electron system

Cited by in corpus (6)

• Metal-insulator transitions and the effects of electron-electron interactions in two-dimensional electron systems
• Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well
• Metal-insulator transition and low-density phases in a strongly-interacting two-dimensional electron system
• Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime
• Manifestation of strong correlations in transport in ultra-clean SiGe/Si/SiGe quantum wells
• Temperature dependent weak field Hall resistance in 2D carrier systems