Temperature dependent weak field Hall resistance in 2D carrier systems

Abstract

Using the Drude-Boltzmann semiclassical transport theory, we calculate the weak-field Hall resistance of a two-dimensional system at low densities and temperatures, assuming carrier scattering by screened random charged impurity centers. The temperature dependent 2D Hall coefficient shows striking non-monotonicity in strongly screened systems, and in particular, we qualitatively explain the recent puzzling experimental observation of a decreasing Hall resistance with increasing temperature in a dilute 2D hole system. We predict that the impurity scattering limited Hall coefficient will eventually increase with temperature at higher temperatures.

5 pages, 2 figures

References in corpus (3)

• Metal-insulator transition in two-dimensional electron systems
• Temperature and Magnetic Field Enhanced Hall Slope of a Dilute 2D Hole System in the Ballistic Regime
• Comment on "Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures"

Cited by in corpus (4)

• Diffusion and ballistic contributions of the interaction correction to the conductivity of a two-dimensional electron gas
• Spin polarization induced tenfold magneto-resistivity of highly metallic 2D holes in a narrow GaAs quantum well
• Hall coefficient and magnetoresistance of 2D spin-polarized electron systems
• Degenerate versus semi-degenerate transport in a correlated 2D hole system