Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime

Abstract

On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, $k_{B}T\tau /\hslash$ $>1$. It is shown that the 'metallic' behaviour of the resistivity ($d\rho /dT>0$) of the low-density 2DHG is caused by hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant $F_0^{\sigma }$ which controls the sign of $d\rho /dT$.

4 pages, 4 figures

References in corpus (6)

• Interaction corrections at intermediate temperatures: I. Longitudinal conductivity and kinetic equation
• In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems
• Interaction corrections at intermediate temperatures: magneto-resistance in parallel field
• Spin polarization and g-factor of a dilute GaAs two-dimensional electron system
• Interaction corrections to the Hall coefficient at intermediate temperatures
• Fermi-liquid behaviour of the low-density 2D hole gas in GaAs/AlGaAs heterostructure at large values of r_s

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