Interference induced metallic-like behavior of a two-dimensional hole gas in asymmetric GaAs/In${}_x$Ga${}_{1-x}$As/GaAs quantum well

Abstract

The temperature and magnetic field dependences of the conductivity of the heterostructures with asymmetric In${}_x$Ga${}_{1-x}$As quantum well are studied. It is shown that the metallic-like temperature dependence of the conductivity observed in the structures investigated is quantitatively understandable within the whole temperature range, $T=0.4-20$ K. It is caused by the interference quantum correction at fast spin relaxation for 0.4 K$<T<1.5$ K. At higher temperatures, 1.5 K$<T<4$ K, it is due to the interaction quantum correction. Finally, at $T>4-6$ K, the metallic-like behavior is determined by the phonon scattering.

arXiv comment4 pages, 4 figures

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Cited by in corpus (3)

• Structural and transport properties of GaAs/delta<Mn>/GaAs/InxGa1-xAs/GaAs quantum wells
• Interference-induced magnetoresistance in HgTe quantum wells
• Weak localization of holes in high-mobility heterostructures