Weak localization of holes in high-mobility heterostructures

Abstract

Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum scattering of holes. The transition from weak localization to anti-localization is demonstrated for long dephasing times. For stronger dephasing the conductivity correction is negative at all hole densities due to non-monotonous dependence of the spin relaxation time on the hole wavevector. The anomalous temperature dependent correction to the conductivity is calculated. We show that the temperature dependence of the conductivity is non-monotonous at moderate hole densities.

5 pages, 4 figures

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Cited by in corpus (5)

• Interference-induced magnetoresistance in HgTe quantum wells
• Weak antilocalization of holes in HgTe quantum wells with a normal energy spectrum
• Weak localization in low-symmetry quantum wells
• Weak Localization in Systems with Chiral Spin Textures and Skyrmion Crystals
• Weak localization and Berry flux in topological crystalline insulators with a quadratic surface spectrum