Weak localization of Dirac fermions in graphene beyond the diffusion regime
arXiv:1103.5048 · doi:10.1016/j.ssc.2011.07.031
Abstract
We develop a microscopic theory of the weak localization of two-dimensional massless Dirac fermions which is valid in the whole range of classically weak magnetic fields. The theory is applied to calculate magnetoresistance caused by the weak localization in graphene and conducting surfaces of bulk topological insulators.
5 pages, 2 figures
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Cited by in corpus (12)
- Spin-helical transport in normal and superconducting topological insulators
- Symmetries and weak (anti)localization of Dirac fermions in HgTe quantum wells
- Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in PbSnSe
- Interference-induced magnetoresistance in HgTe quantum wells
- Weak antilocalization in two-dimensional systems with large Rashba splitting
- Non-diffusion theory of weak localization in graphene
- Weak localization in low-symmetry quantum wells
- Quantum interference in HgTe structures
- Weak localization of holes in high-mobility heterostructures
- Strongly temperature dependent resistance of meander-patterned graphene
- Dynamical diffusion and renormalization group equation for the Fermi velocity in doped graphene
- Weak localization in p-type heterostructures in the presence of parallel magnetic field