Quantum interference in HgTe structures
arXiv:1408.5759 · doi:10.1002/pssb.201350309
Abstract
We study quantum transport in HgTe/HgCdTe quantum wells under the condition that the chemical potential is located outside of the bandgap. We first analyze symmetry properties of the effective Bernevig-Hughes-Zhang Hamiltonian and the relevant symmetry-breaking perturbations. Based on this analysis, we overview possible patterns of symmetry breaking that govern the quantum interference (weak localization or weak antilocalization) correction to the conductivity in two dimensional HgTe/HgCdTe samples. Further, we perform a microscopic calculation of the quantum correction beyond the diffusion approximation. Finally, the interference correction and the low-field magnetoresistance in a quasi-one-dimensional geometry are analyzed.
15 pages, 6 figures; feature article (topical review) for a special issue "Semiconductor Spintronics" (DFG-SPP 1285) of Physica Status Solidi B: Basic Solid State Physics; partly overviews PRB 86, 125323 (2012) and PRB 90, 085401 (2014) (arXiv:1207.4102 and arXiv:1402.7097, respectively)
References in corpus (27)
- Topological Insulators
- Topological insulators and superconductors
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Topological Order and the Quantum Spin Hall Effect
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Topological Insulators in Three Dimensions
- Topological Insulators with Inversion Symmetry
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
- Weak localisation magnetoresistance and valley symmetry in graphene
- Nonlocal edge state transport in the quantum spin Hall state
- The Quantum Spin Hall Effect: Theory and Experiment
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Electron transport in disordered graphene
- Effect of Disorder on Transport in Graphene
- Interaction effects and phase relaxation in disordered systems
- Fingerprint of Different Spin-Orbit Terms for Spin Transport in HgTe Quantum Wells
- Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling
- Interaction-induced criticality in Z_2 topological insulators
- Weak antilocalization in HgTe quantum wells and topological surface states: Massive versus massless Dirac fermions
- Nonbackscattering Contribution to the Weak Localization
- Weak antilocalization in HgTe quantum well with inverted energy spectrum
- Symmetries and weak (anti)localization of Dirac fermions in HgTe quantum wells
- Interaction and disorder effects in 3D topological insulator thin films
- Weak localization of Dirac fermions in graphene beyond the diffusion regime
- One-dimensional weak antilocalization and band Berry phases in HgTe wires
- Probing the Band Topology of Mercury Telluride through Weak Localization and Antilocalization
Cited by in corpus (6)
- Quantum Interference Theory of Magnetoresistance in Dirac Materials
- Fluctuation Phenomena in Chaotic Dirac Quantum Dots: Artificial Atoms on Graphene Flakes
- Interference-induced magnetoresistance in HgTe quantum wells
- Non-diffusion theory of weak localization in graphene
- Weak antilocalization in two-dimensional systems with large Rashba splitting
- Boundary scattering effects on magnetotransport of narrow metallic wires and films