Non-diffusion theory of weak localization in graphene

Abstract

We put forward a theory of the weak localization in two dimensional graphene layers which explains experimentally observable transition between positive and negative magnetoresistance. Calculations are performed for the whole range of classically weak magnetic field with account on intervalley transitions. Contribution to the quantum correction which stems from closed trajectories with few scatterers is carefully taken into account. We show that intervalley transitions lead not only to the transition from weak antilocalization to the weak localization, but also to the non-monotonous dependence of the conductivity on the magnetic field.

11 pages, 5 figures

References in corpus (7)

• The electronic properties of graphene
• Weak localisation magnetoresistance and valley symmetry in graphene
• Strong suppression of weak (anti)localization in graphene
• Intervalley scattering, long-range disorder, and effective time reversal symmetry breaking in graphene
• Spin-helical transport in normal and superconducting topological insulators
• Intervalley scattering and weak localization in Si-based two-dimensional structures
• Quantum interference in HgTe structures

Cited by in corpus (2)

• Radiative decay effects influence the local electromagnetic response of the monolayer graphene with surface corrugations in terahertz range
• Strongly temperature dependent resistance of meander-patterned graphene