Non-diffusion theory of weak localization in graphene
arXiv:1407.0515 · doi:10.1103/PhysRevB.90.155412
Abstract
We put forward a theory of the weak localization in two dimensional graphene layers which explains experimentally observable transition between positive and negative magnetoresistance. Calculations are performed for the whole range of classically weak magnetic field with account on intervalley transitions. Contribution to the quantum correction which stems from closed trajectories with few scatterers is carefully taken into account. We show that intervalley transitions lead not only to the transition from weak antilocalization to the weak localization, but also to the non-monotonous dependence of the conductivity on the magnetic field.
arXiv comment11 pages, 5 figures
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Cited by in corpus (7)
- Weak antilocalization in two-dimensional systems with large Rashba splitting
- Theory of weak localization in graphene with spin-orbit interaction
- Radiative decay effects influence the local electromagnetic response of the monolayer graphene with surface corrugations in terahertz range
- Strongly temperature dependent resistance of meander-patterned graphene
- Weak antilocalization in partially relaxed 200-nm HgTe films
- Weak localization in p-type heterostructures in the presence of parallel magnetic field
- Interplay of Rashba and valley-Zeeman splittings in weak localization of spin-orbit coupled graphene