activity
19992024
most citedGiant Spin Relaxation Anisotropy in Zinc-Blende Heterostructures

253 citations · 1.1k across the 48 of their papers we have counts for

collaborators

48 papers

cond-mat.str-el2024

Disordered quantum antiferromagnetism in doped semiconductors: Density of states approach

N. A. Bogoslovskiy, P. V. Petrov, N. S. Averkiev

We present a theoretical study of the exchange interaction in a system of spatially disordered magnetic moments. A typical example of such a system is an impurity semiconductor, wh…

physics.optics2024

Bisingular surface polaritons at the interface of two uniaxial media

K. Yu. Golenitskii, N. S. Averkiev

In some anisotropic bulk media (for example, biaxial weakly absorbing crystals) there are special directions along which the plane wave field distribution has a singular profile of…

cond-mat.mes-hall2023

Optical orientation of excitons in hybrid metal-semiconductor nanostructures

A. V. Korotchenkov, N. S. Averkiev

We demonstrate the possibility of the optical orientation of excitons in the near field of the metal grating that covers a semiconductor nanostructure. Excitons generated this way…

cond-mat.str-el2023★ 6 cited

Phase diagram of a ferromagnetic semiconductor. The origin of superparamagnetism

N. A. Bogoslovskiy, P. V. Petrov, N. S. Averkiev

We study the theoretical model of a ferromagnetic semiconductor as a system of randomly distributed Ising spins with a long-range exchange interaction. Using the density-of-states…

cond-mat.mes-hall2023★ 1 cited

Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure

Igor V. Rozhansky, Ina V. Kalitukha, Grigorii S. Dimitriev +6

Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to stu…

cond-mat.mtrl-sci2023★ 2 cited

Exchange interaction for Mn acceptor in GaAs: revealing its strong deformation dependence

I. V. Krainov, K. A. Baryshnikov, A. A. Karpova +1

In this paper we calculate exchange interaction constant between manganese ion inner electronic -shell and GaAs valence band bounded hole using their microscopic multiparticle w…