One-dimensional weak antilocalization and band Berry phases in HgTe wires
arXiv:1306.2796 · doi:10.1103/PhysRevLett.112.146803
Abstract
We study the weak antilocalization (WAL) effect in the magnetoresistance of narrow HgTe wires fabricated in quantum wells (QWs) with normal and inverted band ordering. Measurements at different gate voltages indicate that the WAL is only weakly affected by Rashba spin-orbit splitting and persists when the Rashba splitting is about zero. The WAL signal in wires with normal band ordering is an order of magnitude smaller than for inverted ones. These observations are attributed to a Dirac-like topology of the energy bands in HgTe QWs. From the magnetic-field and temperature dependencies we extract the dephasing lengths and band Berry phases. The weaker WAL for samples with a normal band structure can be explained by a non-universal Berry phase which always exceeds π, the characteristic value for gapless Dirac fermions.
5 pages, 3 figures
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- Room-temperature quantum transport signatures in graphene/LaAlO3/SrTiO3 heterostructures
- Interference-induced magnetoresistance in HgTe quantum wells
- Quantum capacitance of an HgTe quantum well as an indicator of the topological phase
- Weak antilocalization of holes in HgTe quantum wells with a normal energy spectrum
- Anomalous Spin Response and Virtual-Carrier-Mediated Magnetism in a Topological Insulator
- Boundary scattering effects on magnetotransport of narrow metallic wires and films
- Quantum interference in HgTe structures
- Granular topological insulators