Single valley Dirac fermions in zero-gap HgTe quantum wells
arXiv:1009.2248 · doi:10.1038/nphys1914
Abstract
Dirac fermions have been studied intensively in condensed matter physics in recent years. Many theoretical predictions critically depend on the number of valleys where the Dirac fermions are realized. In this work, we report the discovery of a two dimensional system with a single valley Dirac cone. We study the transport properties of HgTe quantum wells grown at the critical thickness separating between the topologically trivial and the quantum spin Hall phases. At high magnetic fields, the quantized Hall plateaus demonstrate the presence of a single valley Dirac point in this system. In addition, we clearly observe the linear dispersion of the zero mode spin levels. Also the conductivity at the Dirac point and its temperature dependence can be understood from single valley Dirac fermion physics.
version 2: supplementary material added
References in corpus (11)
- The electronic properties of graphene
- Ultrahigh electron mobility in suspended graphene
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- Suspended Graphene: a bridge to the Dirac point
- Nonlocal edge state transport in the quantum spin Hall state
- Quantum-limited shot noise in graphene
- The Quantum Spin Hall Effect: Theory and Experiment
- The Helical Liquid and the Edge of Quantum Spin Hall Systems
- Electron transport in disordered graphene