Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces

Abstract

We describe the fine structure of Dirac states in HgTe/CdHgTe quantum wells of critical and close-to-critical thickness and demonstrate the formation of an anticrossing gap between the tips of the Dirac cones driven by interface inversion asymmetry. By combining symmetry analysis, atomistic calculations, and k-p theory with interface terms, we obtain a quantitative description of the energy spectrum and extract the interface mixing coefficient. The zero-magnetic-field splitting of Dirac cones can be experimentally revealed in studying magnetotransport phenomena, cyclotron resonance, Raman scattering, or THz radiation absorption.

6 pages, 5 figures

References in corpus (9)

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• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• The Quantum Spin Hall Effect: Theory and Experiment
• Single valley Dirac fermions in zero-gap HgTe quantum wells
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• Spin-orbit splitting of valence subbands in semiconductor nanostructures
• Cyclotron resonance of single valley Dirac fermions in gapless HgTe quantum well
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