Atomic-ordering-induced quantum phase transition between topological crystalline insulator and Z2 topological insulator
arXiv:1702.05697 · doi:10.1088/0256-307X/35/5/057301
Abstract
Topological phase transition in a single material usually refers to transitions between a trivial band insulator and a topological Dirac phase, but the transition may also occur between different classes of topological Dirac phases. However, it is a fundamental challenge to realize quantum transition between Z2 nontrivial topological insulator (TI) and topological crystalline insulator (TCI) in one material because Z2 TI and TCI are hardly both co-exist in a single material due to their contradictory requirement on the number of band inversions. The Z2 TIs must have an odd number of band inversions over all the time-reversal invariant momenta, whereas, the newly discovered TCIs, as a distinct class of the topological Dirac materials protected by the underlying crystalline symmetry, owns an even number of band inversions. Here, take PbSnTe2 alloy as an example, we show that at proper alloy composition the atomic-ordering is an effective way to tune the symmetry of the alloy so that we can electrically switch between TCI phase and Z2 TI phase when the alloy is ordered from a random phase into a stable CuPt phase. Our results suggest that atomic-ordering provides a new platform to switch between different topological phases.
3 figures
References in corpus (10)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Topological Insulators with Inversion Symmetry
- Topological Crystalline Insulators
- The space group classification of topological band insulators
- Computing topological invariants without inversion symmetry
- Strain-induced partially flat band, helical snake states, and interface superconductivity in topological crystalline insulators
- Strain-tunable entangled-light-emitting diodes with high yield and fast operation speed
- Strain engineering Dirac surface states in heteroepitaxial topological crystalline insulator thin films
- Ohmic and non-Ohmic Andreev transport through an interface between superconductor and hopping insulator: Dramatic role of barrier properties