150 citations · 251 across the 10 of their papers we have counts for
10 papers
The interface states in gate-all-around transistors (GAAFETs)
Yue-Yang Liu, Haoran Lu, Zirui Wang +5
The atomic-level structural detail and the quantum effects are becoming crucial to device performance as the emerging advanced transistors, representatively GAAFETs, are scaling do…
Theoretical understanding of correlation between magnetic phase transition and the superconducting dome in high-Tc cuprates
Chen Zhang, Cai-Xin Zhang, Su-Huai Wei +2
Many issues concerning the origin of high-temperature superconductivity (HTS) are still under debate. For example, how the magnetic ordering varies with doping and its relationship…
s-d coupling enhanced phonon anharmonicity in copper-based compounds
Kaike Yang, Huai Yang, Yujia Sun +7
Materials with ultralow thermal conductivity are of great interest for efficient energy conversion and thermal barrier coating. Copper-based semiconductors such as copper chalcogen…
Materials design principles towards high hole mobility learning from an abnormally low hole mobility of silicon
Q. L. Yang, H. X. Deng, S. H. Wei +2
Si dominates the semiconductor industry material but possesses an abnormally low room temperature hole mobility (505 cm^2/Vs), which is four times lower than that of Diamond and Ge…
A realistic dimension-independent approach for charged defect calculations in semiconductors
Jin Xiao, Kaike Yang, Dan Guo +5
First-principles calculations of charged defects have become a cornerstone of research in semiconductors and insulators by providing insights into their fundamental physical proper…
Unified theory of the direct or indirect bandgap nature of conventional semiconductors
Lin-Ding Yuan, Hui-Xiong Deng, Shu-Shen Li +2
Although the direct or indirect nature of the bandgap transition is an essential parameter of semiconductors for optoelectronic applications, the understanding why some of the conv…