activity
20182021
most citeds-d coupling enhanced phonon anharmonicity in copper-based compounds

3 citations · 3 across the 2 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci20213 cited

s-d coupling enhanced phonon anharmonicity in copper-based compounds

Kaike Yang, Huai Yang, Yujia Sun +7

Materials with ultralow thermal conductivity are of great interest for efficient energy conversion and thermal barrier coating. Copper-based semiconductors such as copper chalcogen…

cond-mat.mtrl-sci2020

Materials design principles towards high hole mobility learning from an abnormally low hole mobility of silicon

Q. L. Yang, H. X. Deng, S. H. Wei +2

Si dominates the semiconductor industry material but possesses an abnormally low room temperature hole mobility (505 cm^2/Vs), which is four times lower than that of Diamond and Ge…

cond-mat.mtrl-sci2019

A realistic dimension-independent approach for charged defect calculations in semiconductors

Jin Xiao, Kaike Yang, Dan Guo +5

First-principles calculations of charged defects have become a cornerstone of research in semiconductors and insulators by providing insights into their fundamental physical proper…

cond-mat.mtrl-sci2018

Unified theory of the direct or indirect bandgap nature of conventional semiconductors

Lin-Ding Yuan, Hui-Xiong Deng, Shu-Shen Li +2

Although the direct or indirect nature of the bandgap transition is an essential parameter of semiconductors for optoelectronic applications, the understanding why some of the conv…

cond-mat.mtrl-sci2018

Calculations of point defects in the layered MX2 (M=Mo, W; X=S, Te): Substitution by the groups III, V and VII elements

Dan Guo, Kaike Yang, Tao Shen +5

Dopability in semiconductors plays a crucial role in device performance. Using the first-principles density-functional theory calculations, we investigate systematically the doping…