Hole transport and valence band dispersion law in a HgTe quantum well with normal energy spectrum

Abstract

The results of an experimental study of the energy spectrum of the valence band in a HgTe quantum well of width d<6.3 nm with normal spectrum in the presence of a strong spin-orbit splitting are reported. The analysis of the temperature, magnetic field and gate voltage dependences of the Shubnikov-de Haas oscillations allows us to restore the energy spectrum of the two valence band branches, which are split by the spin-orbit interaction. The comparison with the theoretical calculation shows that a six-band kP theory well describes all the experimental data in the vicinity of the top of the valence band.

7 pages, 7 figures

References in corpus (4)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Single valley Dirac fermions in zero-gap HgTe quantum wells
• Quantum Hall effect in n-p-n and n-2D Topological Insulator-n junctions

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• Weak antilocalization of holes in HgTe quantum wells with a normal energy spectrum
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• Universal transparency and fine band structure near the Dirac point in HgTe quantum wells
• Zeeman splitting of conduction band in HgTe quantum wells near the Dirac point
• Density of states measurements for heavy subband of holes in HgTe quantum wells
• Correlated phases of moat-band excitons in two dimensions