Interband mixing between two-dimensional states localized in a surface quantum well and heavy hole states of the valence band in narrow gap semiconductor

Abstract

Theoretical calculations in the framework of Kane model have been carried out in order to elucidate the role of interband mixing in forming the energy spectrum of two-dimensional carriers, localized in a surface quantum well in narrow gap semiconductor. Of interest was the mixing between the 2D states and heavy hole states in the volume of semiconductor. It has been shown that the interband mixing results in two effects: the broadening of 2D energy levels and their shift, which are mostly pronounced for semiconductors with high doping level. The interband mixing has been found to influence mostly the effective mass of 2D carriers for large their concentration, whereas it slightly changes the subband distribution in a wide concentration range.

12 pages (RevTEX) and 4 PostScript-figures

References in corpus (1)

• Tunnelling Studies of Two-Dimensional States in Semiconductors with Inverted Band Structure: Spin-orbit Splitting, Resonant Broadening

Cited by in corpus (5)

• Spin-orbit splitting of valence and conduction bands in HgTe quantum wells near the Dirac point
• Two-dimensional semimetal in a wide HgTe quantum well: magnetotransport and energy spectrum
• Weak antilocalization in HgTe quantum well with inverted energy spectrum
• Hole transport and valence band dispersion law in a HgTe quantum well with normal energy spectrum
• Anisotropic conductivity and weak localization in HgTe quantum well with normal energy spectrum