Weak antilocalization in HgTe quantum well with inverted energy spectrum

Abstract

The results of experimental study of the magnetoconductivity of 2D electron gas caused by suppression of the interference quantum correction in HgTe single quantum well heterostructure with the inverted energy spectrum are presented. It is shown that only the antilocalization magnetoconductivity is observed at the relatively high conductivity $\sigma >(20-30)G_0$, where $G_0=e^2/2{\pi }^2\hslash$. The antilocalization correction demonstrates a crossover from $0.5\ln ({\tau }_{\varphi }/\tau )$ to $1.0\ln ({\tau }_{\varphi }/\tau )$ behavior with the increasing conductivity or decreasing temperature (here ${\tau }_{\varphi }$ and $\tau$ are the phase relaxation and transport relaxation times, respectively). It is interpreted as a result of crossover to the regime when the two chiral branches of the electron energy spectrum contribute to the weak antilocalization independently. At lower conductivity $\sigma <(20-30)G_0$, the magnetoconductivity behaves itself analogously to that in usual 2D systems with the fast spin relaxation: being negative in low magnetic field it becomes positive in higher one. We have found that the temperature dependences of the fitting parameter ${\tau }_{\varphi }$ corresponding to the phase relaxation time demonstrate reasonable behavior, close to 1/T, over the whole conductivity range from $5G_0$ up to $130G_0$. However, the ${\tau }_{\varphi }$ value remains practically independent of the conductivity in distinction to the conventional 2D systems with the simple energy spectrum, in which ${\tau }_{\varphi }$ is enhanced with the conductivity.

8 pages, 8 figures

References in corpus (22)

• Topological Insulators
• Topological insulators and superconductors
• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Interaction corrections at intermediate temperatures: I. Longitudinal conductivity and kinetic equation
• Single valley Dirac fermions in zero-gap HgTe quantum wells
• Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
• Metallic Phase and Metal-insulator Transition in 2d Electronic Systems
• Transport in disordered two-dimensional topological insulator
• Weak antilocalization in HgTe quantum wells and topological surface states: Massive versus massless Dirac fermions
• Interaction corrections at intermediate temperatures: magneto-resistance in parallel field
• Interaction-induced magnetoresistance in a two-dimensional electron gas
• Classical mechanism for negative magnetoresistance in two dimensions
• Magnetoresistance and dephasing in a two-dimensional electron gas at intermediate conductances
• Quantum Hall effect near the charge neutrality point in two-dimensional electron-hole system
• Weak antilocalization in quantum wells in tilted magnetic fields
• Electron-electron interaction at decreasing $k_{F}l$
• Analysis of negative magnetoresistance. Statistics of closed paths. I. Theory
• Microwave photoresistance in a two-dimensional electron gas with separated Landau levels
• Non-Markovian Effects on the Two-Dimensional Magnetotransport: Low-field Anomaly in Magnetoresistance
• Hole-hole interaction in a strained In${}_x$Ga${}_{1-x}$As two dimensional system
• Interband mixing between two-dimensional states localized in a surface quantum well and heavy hole states of the valence band in narrow gap semiconductor

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