Weak antilocalization in HgTe quantum well with inverted energy spectrum

Abstract

The results of experimental study of the magnetoconductivity of 2D electron gas caused by suppression of the interference quantum correction in HgTe single quantum well heterostructure with the inverted energy spectrum are presented. It is shown that only the antilocalization magnetoconductivity is observed at the relatively high conductivity $\sigma >(20-30)G_0$, where $G_0=e^2/2{\pi }^2\hslash$. The antilocalization correction demonstrates a crossover from $0.5\ln ({\tau }_{\varphi }/\tau )$ to $1.0\ln ({\tau }_{\varphi }/\tau )$ behavior with the increasing conductivity or decreasing temperature (here ${\tau }_{\varphi }$ and $\tau$ are the phase relaxation and transport relaxation times, respectively). It is interpreted as a result of crossover to the regime when the two chiral branches of the electron energy spectrum contribute to the weak antilocalization independently. At lower conductivity $\sigma <(20-30)G_0$, the magnetoconductivity behaves itself analogously to that in usual 2D systems with the fast spin relaxation: being negative in low magnetic field it becomes positive in higher one. We have found that the temperature dependences of the fitting parameter ${\tau }_{\varphi }$ corresponding to the phase relaxation time demonstrate reasonable behavior, close to 1/T, over the whole conductivity range from $5G_0$ up to $130G_0$. However, the ${\tau }_{\varphi }$ value remains practically independent of the conductivity in distinction to the conventional 2D systems with the simple energy spectrum, in which ${\tau }_{\varphi }$ is enhanced with the conductivity.

8 pages, 8 figures

References in corpus (4)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Single valley Dirac fermions in zero-gap HgTe quantum wells
• Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport

Cited by in corpus (2)

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