Quantum Hall effect in n-p-n and n-2D Topological Insulator-n junctions

Abstract

We have studied quantized transport in HgTe wells with inverted band structure corresponding to the two-dimensional topological insulator phase (2D TI) with locally-controlled density allowing n-p-n and n-2D TI-n junctions. The resistance reveals the fractional plateau $2h/e^2$ in n-p-n regime in the presence of the strong perpendicular magnetic field. We found that in n-2D TI-n regime the plateaux in resistance in not universal and results from the edge state equilibration at the interface between chiral and helical edge modes. We provided the simple model describing the resistance quantization in n-2D TI-n regime.

5 pages. 3 figures

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• Semiclassical magnetotransport in graphene n-p junctions
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Cited by in corpus (7)

• Hyperfine interactions in two-dimensional HgTe topological insulators
• Probing topological transitions in HgTe/CdTe quantum wells by magneto-optical measurements
• Interplay of chiral and helical states in a Quantum Spin Hall Insulator lateral junction
• Hole transport and valence band dispersion law in a HgTe quantum well with normal energy spectrum
• Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well
• An all electron topological insulator in InAs double wells
• Tunable spin-polarized edge transport in inverted quantum-well junctions