Quantum Hall effect in n-p-n and n-2D Topological Insulator-n junctions

Abstract

We have studied quantized transport in HgTe wells with inverted band structure corresponding to the two-dimensional topological insulator phase (2D TI) with locally-controlled density allowing n-p-n and n-2D TI-n junctions. The resistance reveals the fractional plateau $2h/e^2$ in n-p-n regime in the presence of the strong perpendicular magnetic field. We found that in n-2D TI-n regime the plateaux in resistance in not universal and results from the edge state equilibration at the interface between chiral and helical edge modes. We provided the simple model describing the resistance quantization in n-2D TI-n regime.

5 pages. 3 figures

References in corpus (9)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Transport measurements across a tunable potential barrier in graphene
• Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
• Quantized Transport in Graphene p-n Junctions in Magnetic Field
• Dissipative Quantum Hall Effect in Graphene near the Dirac Point
• Disorder-induced enhancement of transport through graphene p-n junctions
• Magnetic properties of HgTe quantum wells
• Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system