Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well
arXiv:1703.08317 · doi:10.1103/PhysRevLett.118.206801
Abstract
We present transport measurements on a lateral p-n junction in an inverted InAs/GaSb double quantum well at zero and nonzero perpendicular magnetic fields. At a zero magnetic field, the junction exhibits diodelike behavior in accordance with the presence of a hybridization gap. With an increasing magnetic field, we explore the quantum Hall regime where spin-polarized edge states with the same chirality are either reflected or transmitted at the junction, whereas those of opposite chirality undergo a mixing process, leading to full equilibration along the width of the junction independent of spin. These results lay the foundations for using p-n junctions in InAs/GaSb double quantum wells to probe the transition between the topological quantum spin Hall and quantum Hall states.
References in corpus (9)
- Atomically thin p-n junctions with van der Waals heterointerfaces
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Transport measurements across a tunable potential barrier in graphene
- Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
- Quantized Transport in Graphene p-n Junctions in Magnetic Field
- Giant spin-orbit splitting in inverted InAs/GaSb double quantum wells
- Experimental Signatures of the Inverted Phase in InAs/GaSb Coupled Quantum Wells
- Spin states in InAs/AlSb/GaSb semiconductor quantum wells
- Quantum Hall effect in n-p-n and n-2D Topological Insulator-n junctions
Cited by in corpus (8)
- Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer
- A quantum Stirling heat engine operating in finite time
- Gate-tunable Electronic Transport in p-type GaSb Quantum Wells
- Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
- Phase Slips and Parity Jumps in Quantum Oscillations of Inverted InAs/GaSb Quantum Wells
- Tunable spin-polarized edge transport in inverted quantum-well junctions
- Robustness of Helical Edge States Under Edge Reconstruction
- Electric field-induced edge state oscillations in GaSb/InAs quantum wells